Spin-orbit splitting in single-layer MoS2 revealed by triply resonant Raman scattering.

نویسندگان

  • Linfeng Sun
  • Jiaxu Yan
  • Da Zhan
  • Lei Liu
  • Hailong Hu
  • Hong Li
  • Ben Kang Tay
  • Jer-Lai Kuo
  • Chung-Che Huang
  • Daniel W Hewak
  • Pooi See Lee
  • Ze Xiang Shen
چکیده

Although new spintronic devices based on the giant spin-orbit splitting of single-layer MoS(2) have been proposed, such splitting has not been studied effectively in experiments. This Letter reports the valence band spin-orbit splitting in single-layer MoS(2) for the first time, probed by the triply resonant Raman scattering process. We found that upon 325 nm laser irradiation, the second order overtone and combination Raman modes of single-layer MoS(2) are dramatically enhanced. Such resonant Raman enhancement arises from the electron-two-phonon triple resonance via the deformation potential and Fröhlich interaction. As a sensitive and precise probe for the spin-orbit splitting, the triply resonant Raman scattering will provide a new and independent route to study the spin characteristics of MoS(2).

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عنوان ژورنال:
  • Physical review letters

دوره 111 12  شماره 

صفحات  -

تاریخ انتشار 2013